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Philips Semiconductors
Product specification
TrenchMOSTM transistor
PHP14NQ20T, PHB14NQ20T
FEATURES
* 'Trench' technology * Low on-state resistance * Fast switching * High thermal cycling performance * Low thermal resistance
SYMBOL
d
QUICK REFERENCE DATA VDSS = 200 V ID = 14 A
g
RDS(ON) 230 m
s
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope using 'trench' technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP14NQ20T is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB14NQ20T is supplied in the SOT404 (D2PAK) surface mounting package.
PINNING
PIN 1 2 3 tab gate drain1 source drain DESCRIPTION
SOT78 (TO220AB)
tab
SOT404 (D2PAK)
tab
2
1 23
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature CONDITIONS Tj = 25 C to 175C Tj = 25 C to 175C; RGS = 20 k Tmb = 25 C; VGS = 10 V Tmb = 100 C; VGS = 10 V Tmb = 25 C Tmb = 25 C MIN. - 55 MAX. 200 200 20 14 10 56 125 175 UNIT V V V A A A W C
1 It is not possible to make connection to pin:2 of the SOT404 package October 1999 1 Rev 1.000
Philips Semiconductors
Product specification
TrenchMOSTM transistor
PHP14NQ20T, PHB14NQ20T
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER EAS IAS Non-repetitive avalanche energy Peak non-repetitive avalanche current CONDITIONS Unclamped inductive load, IAS = 14 A; tp = 20 s; Tj prior to avalanche = 25C; VDD 25 V; RGS = 50 ; VGS = 10 V MIN. MAX. 70 14 UNIT mJ A
THERMAL RESISTANCES
SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. SOT78 package, in free air SOT404 package, pcb mounted, minimum footprint TYP. MAX. UNIT 60 50 1.2 K/W K/W K/W
ELECTRICAL CHARACTERISTICS
Tj= 25C unless otherwise specified SYMBOL PARAMETER V(BR)DSS VGS(TO) RDS(ON) gfs IGSS IDSS Qg(tot) Qgs Qgd td on tr td off tf Ld Ld Ls Ciss Coss Crss Drain-source breakdown voltage Gate threshold voltage Drain-source on-state resistance Forward transconductance Gate source leakage current Zero gate voltage drain current Total gate charge Gate-source charge Gate-drain (Miller) charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal drain inductance Internal source inductance Input capacitance Output capacitance Feedback capacitance CONDITIONS VGS = 0 V; ID = 0.25 mA; Tj = -55C VDS = VGS; ID = 1 mA Tj = 175C Tj = -55C VGS = 10 V; ID = 7 A VGS = 10 V; ID = 7 A; Tj = 175C VDS = 25 V; ID = 7 A VGS = 10 V; VDS = 0 V VDS = 200 V; VGS = 0 V; Tj = 175C ID = 14 A; VDD = 160 V; VGS = 10 V MIN. 200 178 2 1 6 TYP. MAX. UNIT 3 150 12.1 10 0.05 38 4 13.3 25 40 83 31 3.5 4.5 7.5 1500 128 60 4 6 230 633 100 10 500 V V V V V m m S nA A A nC nC nC ns ns ns ns nH nH nH pF pF pF
VDD = 30 V; ID = 3 A; VGS = 10 V; RGS = 50 Rgen = 50 Measured tab to centre of die Measured from drain lead to centre of die (SOT78 package only) Measured from source lead to source bond pad VGS = 0 V; VDS = 25 V; f = 1 MHz
October 1999
2
Rev 1.000
Philips Semiconductors
Product specification
TrenchMOSTM transistor
PHP14NQ20T, PHB14NQ20T
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25C unless otherwise specified SYMBOL PARAMETER IS ISM VSD trr Qrr Continuous source current (body diode) Pulsed source current (body diode) Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS MIN. IF = 14 A; VGS = 0 V IF = 14 A; -dIF/dt = 100 A/s; VGS = 0 V; VR = 30 V TYP. MAX. UNIT 1.0 135 690 14 56 1.5 A A V ns nC
October 1999
3
Rev 1.000
Philips Semiconductors
Product specification
TrenchMOSTM transistor
PHP14NQ20T, PHB14NQ20T
120 110 100 90 80 70 60 50 40 30 20 10 0
PD%
Normalised Power Derating
10
Transient thermal impedance, Zth j-a (K/W)
1 D = 0.5 0.2 0.1 0.1 0.05 0.02 single pulse 0.01 1E-06
0
20
40
60
80 100 Tmb / C
120
140
160
180
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00 1E+01
Pulse width, tp (s)
Fig.1. Normalised power dissipation. PD% = 100PD/PD 25 C = f(Tmb)
ID% Normalised Current Derating
Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T
Drain Current, ID (A)
10V 25 20 15 10 5V 5 VGS=4.5 0 0 1 2 3 4 5 6 7 8 9 10 5.5 15V 6.5V 6V
120 110 100 90 80 70 60 50 40 30 20 10 0
30
0
20
40
60
80 100 Tmb / C
120
140
160
180
Drain-Source Voltage, VDS (V)
Fig.2. Normalised continuous drain current. ID% = 100ID/ID 25 C = f(Tmb); conditions: VGS 10 V
Peak Pulsed Drain Current, IDM (A)
Fig.5. Typical output characteristics, Tj = 25 C. ID = f(VDS); parameter VGS
Drain-Source On Resistance, RDS(on) (Ohms) 0.8 0.7 4.5V 5V 5.5V 0.5 0.4 0.3 0.2 0.1 VGS =20 V 6V 6.5V 10V
1000
RDS(on) = VDS/ ID 100 tp = 1 us 10us 10 D.C. 1 100us 1 ms 10 ms 100 ms
0.6
0.1 1 10 100 1000 Drain-Source Voltage, VDS (V)
0 0 10 Drain Current, ID (A) 20
Fig.3. Safe operating area. Tmb = 25 C ID & IDM = f(VDS); IDM single pulse; parameter tp
Fig.6. Typical on-state resistance, Tj = 25 C. RDS(ON) = f(ID); parameter VGS
October 1999
4
Rev 1.000
Philips Semiconductors
Product specification
TrenchMOSTM transistor
PHP14NQ20T, PHB14NQ20T
Drain current, ID (A)
28 24 20 16 12 8 4 0 0 2 4 6 8 10
Gate-source voltage, VGS (V) 175 C Tj = 25 C
5
VGS(TO) / V max.
BUK759-60
4 typ. 3 min. 2
1
0 -100
-50
0
50 Tj / C
100
150
200
Fig.7. Typical transfer characteristics. ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj
Transconductance, gfs (S)
Fig.10. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
Sub-Threshold Conduction
20
1E-01
15
1E-02 2% typ 98%
10
1E-03
1E-04
5
1E-05
0 0 4 8 12 16 ID / (A) 20 24 28
1E-06
0
1
2
3
4
5
Fig.8. Typical transconductance, Tj = 25 C. gfs = f(ID); conditions: VDS = 25 V
a Rds(on) normalised to 25degC
Fig.11. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 C; VDS = VGS
Capacitances, Ciss, Coss, Crss (pF)
3
10000
2.5
Ciss 1000
2
Coss
1.5
100 Crss
1
10
0.5 -100 -50 0 50 100 Tmb / degC 150 200
0
10
20
30
40
Drain-Source Voltage, VDS (V)
Fig.9. Normalised drain-source on-state resistance. a = RDS(ON)/RDS(ON)25 C = f(Tj); ID = 7 A; VGS = 10 V
Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
October 1999
5
Rev 1.000
Philips Semiconductors
Product specification
TrenchMOSTM transistor
PHP14NQ20T, PHB14NQ20T
Gate-source voltage, VGS (V) 14 12 10 8 6 4 2 0 0 10 20 Gate charge, QG (nC) 30 40
Maximum Avalanche Current, IAS (A) 100
VDD = 40 V
10
25 C
VDD = 160 V 1 Tj prior to avalanche = 150 C
0.1 0.001
0.01
0.1 Avalanche time, tAV (ms)
1
10
Fig.13. Typical turn-on gate-charge characteristics. VGS = f(QG); conditions: ID = 14 A; parameter VDS
Fig.15. Maximum permissible non-repetitive avalanche current (IAS) versus.avalanche time (tAV); unclamped inductive load
30
Source-Drain Diode Current, IF (A)
VGS = 0 V
20
175 C
Tj = 25 C
10
0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Source-Drain Voltage, VSDS (V)
Fig.14. Typical reverse diode current. IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
October 1999
6
Rev 1.000
Philips Semiconductors
Product specification
TrenchMOSTM transistor
PHP14NQ20T, PHB14NQ20T
MECHANICAL DATA
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220 SOT78
E P
A A1 q
D1
D
L2(1)
L1 Q
L
b1
1
2
3
b c
e
e
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 4.5 4.1 A1 1.39 1.27 b 0.9 0.7 b1 1.3 1.0 c 0.7 0.4 D 15.8 15.2 D1 6.4 5.9 E 10.3 9.7 e 2.54 L 15.0 13.5 L1 3.30 2.79 L2 max. 3.0
(1)
P 3.8 3.6
q 3.0 2.7
Q 2.6 2.2
Note 1. Terminals in this zone are not tinned. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC TO-220 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-11
Fig.16. SOT78 (TO220AB); pin 2 connected to mounting base (Net mass:2g)
Notes 1. This product is supplied in anti-static packaging. The gate-source input must be protected against static discharge during transport or handling. 2. Refer to mounting instructions for SOT78 (TO220AB) package. 3. Epoxy meets UL94 V0 at 1/8".
October 1999
7
Rev 1.000
Philips Semiconductors
Product specification
TrenchMOSTM transistor
PHP14NQ20T, PHB14NQ20T
MECHANICAL DATA
Plastic single-ended surface mounted package (Philips version of D2-PAK); 3 leads (one lead cropped) SOT404
A E A1 mounting base
D1
D
HD
2
Lp
1
3
b c Q
e
e
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 4.50 4.10 A1 1.40 1.27 b 0.85 0.60 c 0.64 0.46 D max. 11 D1 1.60 1.20 E 10.30 9.70 e 2.54 Lp 2.90 2.10 HD 15.40 14.80 Q 2.60 2.20
OUTLINE VERSION SOT404
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 98-12-14 99-06-25
Fig.17. SOT404 surface mounting package. Centre pin connected to mounting base.
Notes 1. This product is supplied in anti-static packaging. The gate-source input must be protected against static discharge during transport or handling. 2. Refer to SMD Footprint Design and Soldering Guidelines, Data Handbook SC18. 3. Epoxy meets UL94 V0 at 1/8".
October 1999
8
Rev 1.000
Philips Semiconductors
Product specification
TrenchMOSTM transistor
PHP14NQ20T, PHB14NQ20T
MOUNTING INSTRUCTIONS
Dimensions in mm
11.5
9.0
17.5 2.0
3.8
5.08
Fig.18. SOT404 : soldering pattern for surface mounting.
October 1999
9
Rev 1.000
Philips Semiconductors
Product specification
TrenchMOSTM transistor
PHP14NQ20T, PHB14NQ20T
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
October 1999
10
Rev 1.000

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